IndiumV3, Main, Repository, bibRecord, 00E796

Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors

Identifieur interne : 00E796 ( Main/Repository ); précédent : 00E795; suivant : 00E797

Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors

Auteurs : RBID : Pascal:03-0104592

Descripteurs français

Pascal (Inist)
- Jonction p n, Mécanisme formation, Semiconducteur, Faisceau laser, Caractéristique courant tension, Gradient température, Silicium, Indium antimoniure, Si, In Sb, InSb, 7340K, Centre laser donneur.

English descriptors

KwdEn :
- Donor laser centre, Formation mechanism, IV characteristic, Indium antimonides, Laser beams, Semiconductor materials, Silicon, Temperature gradients, p n junctions.

Abstract

We show that creation of a p-n junction in p-Si and p-InSb involve so-called donor laser centres (LCs). Analysis of our experimental data and other authors on p-n junction formation in p-InSb and p-Si using of laser radiation (LR) allowed us to conclude that a thermogradient effect plays the main role in this process. The following methods have been used in experiments: four-probe method and magnetoconcentration effect (MCE) (I-V characteristics in an external perpendicular magnetic field). A temperature gradient was created by YAG:Nd laser in the Q-modulation regime. Experiments on p-Si have shown that the LCs are n-type and they are created in materials doped with B and O only. Three types of LC were found: one type is stable at room temperature and two types are unstable. The effect of LC accumulation and saturation takes place in Si. The calculated distribution of O atoms in temperature gradient field and experiment are in qualitative agreement. Experiments on p-InSb have been carried out at 200 and 290 K. Generation of stable and unstable LC at room temperature was shown. Threshold intensities of LC generation are 1.5 MW/cm²at 200 C and 2 MW/cm² at 290 C. We conclude that generation of LC occurs in solid state.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00DC15

Links to Exploration step

Pascal:03-0104592

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors</title>
<author><name sortKey="Medvid, Artur" uniqKey="Medvid A">Artur Medvid</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Riga Technical University, 14 Azenes Street</s1>
<s2>1048 Riga</s2>
<s3>LVA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Lettonie</country>
<wicri:noRegion>1048 Riga</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Fedorenko, Leonid" uniqKey="Fedorenko L">Leonid Fedorenko</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, 45 Prospect Nauki</s1>
<s2>Kyiv</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Kyiv</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0104592</idno>
<date when="2002">2002</date>
<idno type="stanalyst">PASCAL 03-0104592 INIST</idno>
<idno type="RBID">Pascal:03-0104592</idno>
<idno type="wicri:Area/Main/Corpus">00DC15</idno>
<idno type="wicri:Area/Main/Repository">00E796</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Donor laser centre</term>
<term>Formation mechanism</term>
<term>IV characteristic</term>
<term>Indium antimonides</term>
<term>Laser beams</term>
<term>Semiconductor materials</term>
<term>Silicon</term>
<term>Temperature gradients</term>
<term>p n junctions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Jonction p n</term>
<term>Mécanisme formation</term>
<term>Semiconducteur</term>
<term>Faisceau laser</term>
<term>Caractéristique courant tension</term>
<term>Gradient température</term>
<term>Silicium</term>
<term>Indium antimoniure</term>
<term>Si</term>
<term>In Sb</term>
<term>InSb</term>
<term>7340K</term>
<term>Centre laser donneur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We show that creation of a p-n junction in p-Si and p-InSb involve so-called donor laser centres (LCs). Analysis of our experimental data and other authors on p-n junction formation in p-InSb and p-Si using of laser radiation (LR) allowed us to conclude that a thermogradient effect plays the main role in this process. The following methods have been used in experiments: four-probe method and magnetoconcentration effect (MCE) (I-V characteristics in an external perpendicular magnetic field). A temperature gradient was created by YAG:Nd laser in the Q-modulation regime. Experiments on p-Si have shown that the LCs are n-type and they are created in materials doped with B and O only. Three types of LC were found: one type is stable at room temperature and two types are unstable. The effect of LC accumulation and saturation takes place in Si. The calculated distribution of O atoms in temperature gradient field and experiment are in qualitative agreement. Experiments on p-InSb have been carried out at 200 and 290 K. Generation of stable and unstable LC at room temperature was shown. Threshold intensities of LC generation are 1.5 MW/cm<sup>2</sup>
at 200 C and 2 MW/cm<sup>2</sup>
 at 290 C. We conclude that generation of LC occurs in solid state.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0>
</fA01>
<fA03 i2="1"><s0>Appl. surf. sci.</s0>
</fA03>
<fA05><s2>197-98</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 6th international conference on laser ablation, Tsukuba, Japan, 1st-5th October 2001</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MEDVID (Artur)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>FEDORENKO (Leonid)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>MURAKAMI (Kouichi)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>YABE (Akira)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>HORWITZ (J. S.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>FOTAKIS (C.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>DICKINSON (J. T.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Riga Technical University, 14 Azenes Street</s1>
<s2>1048 Riga</s2>
<s3>LVA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Semiconductor Physics, 45 Prospect Nauki</s1>
<s2>Kyiv</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Institute of Applied Physics, University of Tsukuba</s1>
<s2>Ibaraki 305-8573</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Photoreaction Control Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi</s1>
<s2>Tsukuba, Ibaraki 305-8565</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>Institute of Electronic Structure and Laser, Foundation for Research and Technology, Hellas, P.O. Box 1527</s1>
<s2>Heraklion 71110</s2>
<s3>GRC</s3>
<sZ>4 aut.</sZ>
</fA15>
<fA15 i1="04"><s1>Physics Department, Washington State University, Webster 248</s1>
<s2>Pullman, WA 99164-2814</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
</fA15>
<fA15 i1="05"><s1>Naval Research Laboratory</s1>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>877-882</s1>
</fA20>
<fA21><s1>2002</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000105391701620</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>21 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>03-0104592</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We show that creation of a p-n junction in p-Si and p-InSb involve so-called donor laser centres (LCs). Analysis of our experimental data and other authors on p-n junction formation in p-InSb and p-Si using of laser radiation (LR) allowed us to conclude that a thermogradient effect plays the main role in this process. The following methods have been used in experiments: four-probe method and magnetoconcentration effect (MCE) (I-V characteristics in an external perpendicular magnetic field). A temperature gradient was created by YAG:Nd laser in the Q-modulation regime. Experiments on p-Si have shown that the LCs are n-type and they are created in materials doped with B and O only. Three types of LC were found: one type is stable at room temperature and two types are unstable. The effect of LC accumulation and saturation takes place in Si. The calculated distribution of O atoms in temperature gradient field and experiment are in qualitative agreement. Experiments on p-InSb have been carried out at 200 and 290 K. Generation of stable and unstable LC at room temperature was shown. Threshold intensities of LC generation are 1.5 MW/cm<sup>2</sup>
at 200 C and 2 MW/cm<sup>2</sup>
 at 290 C. We conclude that generation of LC occurs in solid state.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C40K</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Jonction p n</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>p n junctions</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Mécanisme formation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Formation mechanism</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Mecanismo formacion</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Faisceau laser</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Laser beams</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gradient température</s0>
<s5>09</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Temperature gradients</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>19</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>19</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium antimoniure</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>In Sb</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>InSb</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>7340K</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Centre laser donneur</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Donor laser centre</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s4>INC</s4>
<s5>62</s5>
</fC07>
<fN21><s1>055</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Laser Ablation</s1>
<s2>6</s2>
<s3>Tsukuba JPN</s3>
<s4>2001-10-01</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00E796 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00E796 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:03-0104592
   |texte=   Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors

Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri